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PD- 93774A SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l IRF820AS IRF820AL HEXFET(R) Power MOSFET VDSS 500V RDS(on) max 3.0 ID 2.5A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l D2 Pak IRF820AS TO-262 IRF820AL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 2.5 1.6 10 50 0.4 30 3.4 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l Two Transistor Forward Half Bridge and Full Bridge Notes through are on page 8 www.irf.com 1 5/8/00 IRF820AS/L Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 2.0 --- --- --- --- Typ. --- 0.60 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 3.0 VGS = 10V, ID = 1.5A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 8.1 12 16 13 340 53 2.7 490 15 28 Max. Units Conditions --- S VDS = 50V, ID = 1.5A 17 ID = 2.5A 4.3 nC VDS = 400V 8.5 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 2.5A ns --- RG = 21 --- RD = 97,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, V DS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 140 2.5 5.0 Units mJ A mJ Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)* Typ. --- --- Max. 2.5 62 Units C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 2.5 showing the A G integral reverse --- --- 10 S p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 2.5A, VGS = 0V --- 330 500 ns TJ = 25C, I F = 2.5A --- 760 1140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF820AS/L 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Current (A) 1 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 0.1 4.5V 4.5V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 1 10 20s PULSE WIDTH TJ = 150 C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 3.0 ID = 2.5A TJ = 150 C 1 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25 C 0.1 1.5 1.0 0.5 0.01 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF820AS/L 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 20 ID = 2.5A 1000 VGS , Gate-to-Source Voltage (V) VDS = 400V VDS = 250V VDS = 100V 15 C, Capacitance(pF) Ciss 100 10 Coss 10 5 Crss 1 1 10 100 1000 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) I D , Drain Current (A) TJ = 150 C 10 10us 1 100us TJ = 25 C 1 1ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 10ms 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF820AS/L 3.0 VDS VGS RG RD 2.5 D.U.T. + I D , Drain Current (A) 2.0 -VDD 10V 1.5 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.5 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF820AS/L 1 5V 300 EAS , Single Pulse Avalanche Energy (mJ) TOP 250 VDS L D R IV E R BOTTOM ID 1.1A 1.6A 2.5A 200 RG 20V tp D .U .T IA S + V - DD A 150 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD V DSav , Avalanche Voltage ( V ) 700 650 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 600 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS 550 0.0 0.5 1.0 1.5 2.0 2.5 IAV , Avalanche Current ( A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRF820AS/L Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) power MOSFETs www.irf.com 7 IRF820AS/L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRF820AS/L Package Outline TO-262 Part Marking Information TO-262 www.irf.com 9 IRF820AS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. 6 0.0 0 (2.36 2) M IN . Notes: N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 45mH RG = 25, IAS = 2.5A. (See Figure 12) ISD 2.5A, di/dt 270A/s, VDD V(BR)DSS, TJ 150C Uses IRF820A data and test conditions * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 5/00 10 www.irf.com |
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